Regions of different widths ( w) are fabricated on the same heterostructure using EBL and RIE (see Methods). (a) Left: schematic overview of GrFET design and circuit connection used for width-dependent measurements. The Knudsen, Poiseuille, and diffusive transport regimes are indicated by color bars in the top panel. (e) Evolution of d V/ d I curves at n = 1.6 × 10 11 cm − 2 (white dashed line for T = 9 and 150 K data in (c) for increasing values T from 9 (top) to 300 K (bottom). The number density ranges for the different d V/ d I scaling behaviors are indicated at the top of the color plot (left panel in c) by solid lines of the same color as the corresponding scatter plot in (d). (d) Plots depicting the I DC dependence of differential resistance at T = 9 K for three different n values indicated by white dashed lines in (c). (c) Color plots of d V/ d I as a function of I DC and n at T = 9 (left) and 150 K (right). Red and yellow dot lines highlight the bottom and top h-BN flakes, respectively. (b) Optical image of the device used for current bias measurements. I AC and I DC represent the AC and DC bias current. (a) Schematic depiction of a typical GrFET device with circuit connections for current bias measurements.
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